Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
نویسندگان
چکیده
منابع مشابه
Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملThe MOS Single Electron Transistor (MOS-SET)
We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level quantization is clearly seen. The interpl...
متن کاملGate Tunnel Current in an MOS Transistor
A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.
متن کاملGate capacitances of high electron mobility transistors
The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2020
ISSN: 2158-3226
DOI: 10.1063/5.0012687